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SUM110N04-2m1P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.0021 at V GS = 10 V
40
0.0024 at V GS = 4.5 V
I D (A) a, c
110
110
Q g (Typ.)
240 nC
FEATURES
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
APPLICATIONS
RoHS
COMPLIANT
? Synchronous Rectification
? Power Supplies
D
TO-263
G
G
D S
Top View
Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
40
± 20
110 a, c
Unit
V
110
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C
I D
I DM
I AS
E AS
I S
110 c
29 b
23 b
250
80
320
a, c
2.6 b
A
V
A
T C = 25 °C
312 a
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
200
3.13 b
W
T A = 70 °C
2.0 b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b
Maximum Junction-to-Case
Steady State
Steady State
R thJA
R thJC
32
0.33
40
0.4
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. Calculated based on maximum junction temperature. Package limitation current is 110 A.
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
www.vishay.com
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